IPP120N08S403AKSA1 vs IPP120N08S4-03 比較

詳細並排比較 IPP120N08S403AKSA1 由 Infineon 與 IPP120N08S4-03 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 ✓ 啟用中

規格比較

參數 IPP120N08S403AKSA1 IPP120N08S4-03
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 120 A —
Pulsed Drain Current (bondwire-limited) 245 A at 25 C —
Maximum Power Dissipation (Ptot) 278 W (Tc) —
On-State Resistance (RDS(on)) 2.8 mOhm typical at VGS=10 V, ID=100 A —
Gate Threshold Voltage (VGS(th)) 4 V max —
Total Gate Charge (Qg) 167 nC —
Input Capacitance (Ciss) 11550 pF —
Thermal Resistance, Junction-to-Case (RthJC) 0.54 K/W —
工作接面溫度 -55 C to +175 C —
封裝 TO-220-3-1 (PG-TO220-3-1) TO-220-3 (IPAK) through-hole
安裝類型 Through Hole Through-Hole
MSL 等級 MSL1 (peak reflow up to 260 C) MSL1 (peak reflow 260 °C)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Avalanche Rating 100% avalanche-tested —
RoHS 狀態 Compliant (Green Product) —
Channel Type N-Channel enhancement mode N-channel Enhancement Mode
Technology Family OptiMOS —
Part Number — IPP120N08S4-03
Manufacturer — Infineon Technologies
Family — OptiMOS-T2 Power-Transistor
Drain-Source Voltage VDS max — 80 V
Continuous Drain Current ID — 120 A (bondwire limited)
Silicon-Limited Current — 245 A at TC = 25 °C
On-State Resistance RDS(on) max — 2.5 mΩ at VGS = 10 V
Gate-Source Voltage VGS — ±20 V (max)
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Thermal Resistance RthJC — 0.54 K/W
Avalanche Rated — 100 % Avalanche tested
工作溫度 — -55 °C to +175 °C
RoHS Compliance — Green Product, RoHS compliant
Orderable Part Number — IPP120N08S403AKSA1

資料表與資源

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