IQDH35N03LM5CGATMA1 vs BSC0902NSATMA1 比較
詳細並排比較 IQDH35N03LM5CGATMA1 由 Infineon 與 BSC0902NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ 啟用中
規格比較
| 參數 | IQDH35N03LM5CGATMA1 | BSC0902NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 0.35 mΩ (typical at VGS=10 V) | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55C to +150C (Tj) |
| 封裝 | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TDSON-8-6 (SuperSO8) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | — |
| 無鹵素 | Yes | Yes, per IEC 61249-2-21 |
| Channel Type | N-Channel | — |
| Technology | OptiMOS 5 trench MOSFET | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, Ta) | — | 24 A |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 48 W |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| RDS(on) @ VGS=10V max | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| RDS(on) @ VGS=4.5V max | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| Qualification | — | JEDEC qualified for target applications |
| RoHS Compliance | — | Compliant (Pb-free lead plating) |
| Avalanche Rated | — | Yes (100% avalanche tested) |