IQE008N03LM5CGSCATMA1 vs IQE220N15NM5CGSCATMA1 比較
詳細並排比較 IQE008N03LM5CGSCATMA1 由 Infineon 與 IQE220N15NM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQE008N03LM5CGSCATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 4.6 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| 工作溫度範圍 | -55C to +150C (junction) | -55C to +150C (junction) |
| 封裝 | PG-WHTFN-9 (WHTFN) | PG-WHTFN-9 (Source-Down) |
| 安裝類型 | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5, Source-Down |
| Polarity | N-Channel | — |
| 腳位數 | 9 (WHTFN with exposed thermal pads) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | — |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes (Infineon standard for OptiMOS 5) | — |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |