IQE020N04LM6CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 比較
詳細並排比較 IQE020N04LM6CGSCATMA1 由 Infineon 與 IQEH50NE2LM7UCGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ 啟用中規格比較
| 參數 | IQE020N04LM6CGSCATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 low-voltage power MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current at TA=25°C | 25 A | — |
| Continuous Drain Current at TC=25°C | 166 A | — |
| Maximum RDS(on) | 2.0 mΩ (per IQE part-number decode) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 107 W | — |
| 封裝 | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-WHTFN-9-1 (surface mount) |
| 腳位數 | 9 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +150 °C (junction, per Infineon MOSFET convention) | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等級 | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | — |
| Technology | OptiMOS 6 trench | Silicon N-Channel Power MOSFET |
| Product Family | — | OptiMOS 7 Power-Transistor |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 54 A |
| Continuous Drain Current (ID) at TC | — | 422 A |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |
| Maximum Junction Temperature | — | 175 °C |
| Series | — | OptiMOS 7 |