IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
MPN： IQEH50NE2LM7UCGSCATMA1 ✓ 啟用中IQEH50NE2LM7UCGSCATMA1 概覽
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-source voltage creates a conductive channel between drain and source. Power MOSFETs sit inside the broader semiconductor hierarchy: MOSFET -> discrete semiconductor -> power discrete -> switch-mode power conversion building block. Optimized low-voltage MOSFETs such as this part are routinely used as synchronous rectifiers on the secondary side of buck converters, where every milliohm of RDS(on) translates directly into conduction loss, efficiency, and thermal headroom.
Key differentiating parameters include 25 V drain-source breakdown voltage optimized for 12 V rails, 0.5 mΩ maximum on-resistance for minimum conduction loss, 175°C rated junction temperature for harsh thermal environments, and a 2 V typical gate threshold enabling low-voltage gate drive. The device dissipates 2.5 W at TA and 150 W at TC, with PCB layout on 6 cm² of copper drain area per the datasheet characterization conditions. The PG-WHTFN-9-1 package provides top-side cooling and a small footprint suitable for high-density VRM topologies.
Typical applications include AI accelerator point-of-load converters, server core voltage rails, telecom 48 V intermediate bus converters, hot-swap circuits, and OR-ing FETs in redundant power supplies. Its low RDS(on) and high current rating make it especially suitable as a synchronous rectifier where switching losses and conduction losses both matter.
When designing with this part, prioritize Kelvin-source gate drive to fully realize the 0.5 mΩ rating, and use the datasheet SOA diagram to verify operation under fault and transient conditions. PCB layout should minimize source-inductance loop area and maximize copper on the drain tab for thermal spreading.
This page synthesizes distributor inventory, parametric comparison with drop-in alternatives, and design notes not found in the manufacturer datasheet, helping engineers select and qualify the part faster.
直接替換替代品，適用於 IQEH50NE2LM7UCGSCATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IQEH50NE2LM7UCGSCATMA1 （相同外形與佔位） — 差異在於 Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Power Dissipation (Tc).
IQEH50NE2LM7UCGSC
✅ 直接替換📋 參考替代品（不在目錄中）
IQE220N15NM5CGSCATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC014NE2LSIATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC037N12NM6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC015N06NM5LF2ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IQEH50NE2LM7UCGSCATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor |
| 電晶體類型 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 25 V |
| Continuous Drain Current (ID) at TA | 54 A |
| Continuous Drain Current (ID) at TC | 422 A |
| RDS(on) Max | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | 2 V |
| Power Dissipation (PD) at TA | 2.5 W |
| Power Dissipation (PD) at TC | 150 W |
| Maximum Junction Temperature | 175 °C |
| 封裝 | PG-WHTFN-9-1 (surface mount) |
| 安裝類型 | Surface Mount |
| Series | OptiMOS 7 |
| Technology | Silicon N-Channel Power MOSFET |
IQEH50NE2LM7UCGSCATMA1 pg-whtfn-9-1 (surface mount) 腳位配置指南
IQEH50NE2LM7UCGSCATMA1（pg-whtfn-9-1 (surface mount) 封裝）的腳位配置。 此功率元件具有閘極、汲極與源極端子。對於非極性封裝，請參閱製造商資料表以取得確切的第 1 腳方向與佈局詳細資訊。常見應用包括電源設計、馬達驅動與負載切換。
無詳細腳位定義資料： IQEH50NE2LM7UCGSCATMA1.
請參閱 資料表 以查看完整腳位配置。
安全工作區
典型應用
IQEH50NE2LM7UCGSCATMA1 適用於 6 應用s: AI Server Point-of-Load Converters, Data Center 48 V Intermediate Bus Converters, Telecom Hot-Swap and OR-ing FETs, Synchronous Rectification in Server VRMs, Industrial High-Current DC-DC Modules, Battery Protection and Power Path Management.
AI Server Point-of-Load Converters
The IQEH50NE2LM7UCGSCATMA1 is well matched to 12 V point-of-load (PoL) converters feeding AI accelerator cores. Its 0.5 mΩ max RDS(on) and 422 A pulsed TC current let it serve as a synchronous rectifier with very low conduction loss, while the 25 V VDS rating provides comfortable headroom above the 12 V nominal bus. The PG-WHTFN-9-1 footprint supports dense VRM layouts typical of AI accelerator boards, where every milliohm of RDS(on) directly improves efficiency and reduces thermal load.
推薦
Data Center 48 V Intermediate Bus Converters
For 48 V intermediate bus architectures, the IQEH50NE2LM7UCGSCATMA1 can be used on the secondary-side synchronous rectification stage where high current and low loss are mandatory. The 25 V VDS allows placement on the 12 V output side of a multi-stage IBC. Its 175°C maximum junction temperature supports sustained high-current operation in well-cooled server chassis, and the 0.5 mΩ RDS(on) keeps conduction loss manageable even at hundreds of amps.
推薦
Telecom Hot-Swap and OR-ing FETs
The IQEH50NE2LM7UCGSCATMA1 serves as a hot-swap or OR-ing FET on -48 V telecom distribution boards where its low RDS(on) minimizes steady-state dissipation while the 25 V class fits 12 V load-side rails. The 54 A continuous TA rating supports typical 240-360 W load circuits. PG-WHTFN-9-1's top-side thermal pad aids board-level cooling, and the Infineon OptiMOS 7 process provides tight threshold distribution for predictable current sharing across redundant supplies.
推薦
Synchronous Rectification in Server VRMs
The IQEH50NE2LM7UCGSCATMA1 is engineered as a synchronous rectifier (low-side FET) in multi-phase buck VRMs for server CPUs and GPUs. With 0.5 mΩ max RDS(on) and 2 V typical gate threshold, it pairs with a companion high-side MOSFET and a 3.3 V-capable gate driver. Its 175°C rating and 150 W PD at TC enable sustained high current per phase, while the surface-mount PG-WHTFN-9-1 package reduces loop inductance compared to DPAK, helping minimize switching loss.
推薦
Industrial High-Current DC-DC Modules
In industrial 24 V to 12 V buck modules and high-current DC-DC bricks, the IQEH50NE2LM7UCGSCATMA1 fits as the synchronous rectifier or main switch on the 12 V side. Its 0.5 mΩ RDS(on) and 422 A pulsed rating support kilowatt-class brick converters. The wide -55°C to +175°C operating range suits industrial environments, and the small PG-WHTFN-9-1 footprint allows compact brick designs while the top-side thermal pad interfaces directly to a heatsink or cold plate.
推薦
Battery Protection and Power Path Management
For 12 V battery management systems and power-path OR-ing in industrial UPS or e-mobility charging infrastructure, the IQEH50NE2LM7UCGSCATMA1 can be used as a low-loss disconnect FET. Its 0.5 mΩ RDS(on) minimizes steady-state voltage drop across the protection element, and the 25 V VDS comfortably exceeds 12 V battery transients. The PG-WHTFN-9-1 package provides mechanical robustness and good thermal performance for continuous conduction in power-path circuits.
推薦
推薦產品摘要
工程參考資料，適用於 IQEH50NE2LM7UCGSCATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IQEH50NE2LM7UCGSC | IQE220N15NM5CGSCATMA1 | BSC014NE2LSIATMA1 | ISC037N12NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 | PG-WHTFN-9-1 |
| VDS Max | 25 V | 25 V | 150 V | 25 V | 120 V | 60 V |
| RDS(on) Max | 0.5 mΩ | 0.5 mΩ | 22 mΩ | 1.4 mΩ | 3.7 mΩ | 1.5 mΩ |
| Continuous ID @ TA | 54 A | 54 A | 55 A | 40 A | 46 A | 55 A |
| PD @ TC | 150 W | 150 W | 150 W | 89 W | 83 W | 104 W |
| Max Junction Temp | 175 °C | 175 °C | 175 °C | 150 °C | 175 °C | 175 °C |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 2 | OptiMOS 6 | OptiMOS 5 LF2 |
| Target Application | AI / Data Center PoL | AI / Data Center PoL | Industrial HV | Server VRM | Industrial MV | Server / PoL |
主要差異化特點
- Lowest RDS(on) in the Infineon 25 V OptiMOS 7 PG-WHTFN family (對比BSC014NE2LSIATMA1)
- 25 V VDS optimized for 12 V synchronous rectification (對比IQE220N15NM5CGSCATMA1)
- OptiMOS 7 generation with 175°C junction rating (對比ISC015N06NM5LF2ATMA1)
設計說明
Estimated: At continuous drain current of 54 A at TA and 422 A pulsed at TC, the IQEH50NE2LM7UCGSCATMA1 dissipates substantial heat in the PG-WHTFN-9-1 package. Infineon's datasheet characterization uses a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² of 70 µm copper for the drain. For full SOA utilization, follow this minimum copper area and connect the top-side thermal pad to a copper pour or cold plate with multiple thermal vias.
Use a Kelvin-source gate drive connection to fully realize the 0.5 mΩ RDS(on) specification; sharing the source bond wire between gate-drive return and high-current return path adds ~0.2-0.4 mΩ of effective resistance and degrades efficiency at high current. Place the gate-driver and gate resistor within 5 mm of the gate pad to minimize the gate-drive loop inductance, which directly controls switching loss.
Estimated: With 2.5 W PD at TA, the package can dissipate in still air on a moderate PCB; at the 150 W TC rating, the package requires significant cooling. Use the datasheet SOA diagram to verify operation under worst-case load transients, and de-rate below 175°C maximum junction temperature - a 25-30°C margin is recommended for production reliability per typical power-electronics design practice.
Do not parallel this part with significantly different RDS(on) without adequate gate-source resistor balancing; OptiMOS 7 has positive temperature coefficient of RDS(on), but threshold voltage variation between parallel units can still cause current imbalance. Verify peak drain current under worst-case operating conditions (input surge, output short, hot-swap) against the SOA. Confirm 25 V VDS headroom above maximum bus transients in your system.
合規資訊
RoHS and lead-free status inferred from Infineon OptiMOS 7 standard product compliance per product page; AEC-Q100 automotive grade not stated in the verified distributor listings.
