IQE050N08NM5CGATMA1 vs IQD016N08NM5ATMA1 比較
詳細並排比較 IQE050N08NM5CGATMA1 由 Infineon 與 IQD016N08NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQE050N08NM5CGATMA1 | IQD016N08NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (Ta) | 16 A | 31 A |
| Continuous Drain Current (Tc) | 101 A | 323 A |
| On-Resistance RDS(on) Max | 5.0 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 100 W | 333 W |
| 封裝 | PG-TTFN-9-1 (Surface Mount) | PG-TSON-8-9 (PQFN 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | OptiMOS 5 Power-MOSFET |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| 工作溫度 | -55°C to +175°C (TJ max) | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| On-Resistance RDS(on) typical | — | 1.6 mΩ |
| 工作溫度範圍 | — | -55C to +150C (junction, standard MOSFET rating) |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typical] |