IR2127STRPBF vs IRS2109STRPBF 比較

詳細並排比較 IR2127STRPBF 由 Infineon 與 IRS2109STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR2127STRPBF IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF ✓ 啟用中

規格比較

參數 IR2127STRPBF IRS2109STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration High-Side Half-Bridge
Supply Voltage Range 12 V to 20 V —
Output Voltage (Offset) up to 600 V —
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns (typical) —
Input Logic Non-Inverting —
輸出數量 1 —
上升時間 80 ns (typical) —
下降時間 60 ns (typical) —
工作溫度範圍 -40C to +125C —
封裝 8-SOIC (3.90 mm body) 8-SOIC (3.90 mm body width)
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL3 (per JEDEC J-STD-020) 1 (unlimited floor life at <30C / 85% RH)
Lead-Free / RoHS Pb-free (PBF), RoHS compliant Yes (Pb-free suffix 'PBF')
dV/dt Immunity Yes (high-side floating channel) —
Integrated Current Sense Yes (cycle-by-cycle comparator) —
Input Type — Non-Inverting, Single Input
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage (VOffset) — 600 V maximum
Supply Voltage (VCC) — 10 V to 20 V
Logic Input Voltage — Compatible with 3.3 V and 5 V logic
Source Current (typical) — 290 mA
Sink Current (typical) — 600 mA
Propagation Delay (ton/off) — 540 ns (typical)
Deadtime — 540 ns (fixed, internal)
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
工作溫度 — -40C to +125C
Packaging — Tape and Reel (TR suffix)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價