IRF1310NSTRLPBF vs IRFB4110PBF 比較
詳細並排比較 IRF1310NSTRLPBF 由 Infineon 與 IRFB4110PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF1310NSTRLPBF | IRFB4110PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $1.55 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | 4.5 mΩ |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 73.3 nC | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| 工作溫度範圍 | -55C to +175C | — |
| 封裝 | D2PAK (TO-263AB) | TO-220AB (through-hole) |
| 安裝類型 | Surface Mount | Through Hole |
| Technology | IR MOSFET (HEXFET) | HEXFET (planar DMOS) |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| RoHS 狀態 | — | Compliant (Pb-free suffix) |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |