IRF8736PBF vs IRF7832TRPBF 比較
詳細並排比較 IRF8736PBF 由 Infineon 與 IRF7832TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF8736PBF | IRF7832TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TA=70°C | [DATA_NEEDED: ID at TA=70°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) at VGS=10V | 4.8 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | 6.0 mΩ (typical) | — |
| Gate-Source Threshold Voltage VGS(th) | Logic-level (optimized for 5 V drive) | — |
| Total Gate Charge Qg | 17 nC (typical) | — |
| Maximum Power Dissipation at TA=25°C | 2.5 W | — |
| 工作溫度範圍 | -55°C to +150°C (junction) | -55 C to +150 C (TJ) |
| 封裝 | SO-8 (8-SO) | 8-SO (SOIC-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (Unlimited) | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free | Lead-Free, RoHS3 Compliant | — |
| Qualification Standard | JEDEC | — |
| Avalanche Rated | Yes (fully characterized avalanche voltage and current) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7832TRPBF |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (trench MOSFET) |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| On-Resistance RDS(on) max at VGS=10V | — | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | — | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | — | 34 nC |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |