IRFB7545PBF vs IRFZ48NPBF 比較

詳細並排比較 IRFB7545PBF 由 Infineon 與 IRFZ48NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFZ48NPBF IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF ✓ 啟用中

規格比較

參數 IRFB7545PBF IRFZ48NPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IRFB7545PBF —
Technology StrongIRFET™ (HEXFET, N-Channel) HEXFET (advanced planar)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current]
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
工作接面溫度 -55C to +175C -55C to +175C
封裝 TO-220AB (Through-Hole) TO-220AB (through-hole)
安裝類型 Through Hole (THT) Through Hole
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) —
MSL 等級 N/A (Through-Hole) —
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 64 A
Gate-to-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) at VGS=10V — 14 mΩ (maximum)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 54 nC
Power Dissipation (PD) at TC — 130 W
Lead-Free (PBF suffix) — Yes
RoHS 狀態 — Compliant
Qualification Standard — Industrial market

資料表與資源

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