IRFR1205TRPBF vs IRLR2705TRPBF 比較

詳細並排比較 IRFR1205TRPBF 由 Infineon 與 IRLR2705TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLR2705TRPBF IRLR2705TRPBF - 55V 28A N-Channel HEXFET MOSFET | Infineon

IRLR2705TRPBF - 55V 28A N-Channel HEXFET MOSFET | Infineon

IRLR2705TRPBF ✓ 啟用中

規格比較

參數 IRFR1205TRPBF IRLR2705TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (IR MOSFET generation 5)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max Logic-Level (compatible with 4V drive)
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC 16.7 nC
Power Dissition (PD) at TC=25C 107 W —
工作接面溫度 -55C to +175C -55C to +175C
封裝 TO-252AA (DPAK) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 28 A
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C with 1in2 copper]
RDS(on) Max at VGS=10V — 40 mOhm
RDS(on) Max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate-to-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute max, +/-V]
Power Dissipation (PD) at Tc=25C — 68 W
Power Dissipation (PD) at TA=25C — [DATA_NEEDED: PD at TA=25C with 1in2 copper]
Avalanche Rated — Yes
Lead-Free / RoHS — Yes (Pb-free, RoHS compliant)
MSL 等級 — [DATA_NEEDED: MSL rating per JEDEC J-STD-020]

資料表與資源

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