IRFR220NTRLPBF vs IRFR220NPBF 比較
詳細並排比較 IRFR220NTRLPBF 由 Infineon 與 IRFR220NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR220NTRLPBF | IRFR220NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 5 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 0.800 ohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: total gate charge] |
| Gate-to-Drain Charge (Qgd) | Low (per datasheet - HEXFET design) | — |
| Power Dissipation (Pd) at Tc=25C | 43 W | — |
| 工作溫度範圍 | -55C to +150C (junction) | -55C to +150C (junction) |
| 封裝 | TO-252AA (DPAK), 2 Leads + Tab, SC-63 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant (Pb-free PBF suffix) | — |
| Packaging | Tape & Reel (Left orientation - TRLPBF) | — |
| Avalanche Rated | Yes (HEXFET ruggedized design) | — |
| Technology Family | HEXFET, Planar, Generation 3 | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25C | — | 5 A |
| Power Dissipation (PD) at TC=25C | — | 43 W |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| 封裝 / 外殼 | — | TO-252AA (DPAK) |
| Technology | — | HEXFET (Planar) |
| Lead-Free / RoHS | — | Yes, lead-free (PBF suffix) |
| Avalanche Energy Rated | — | Yes (per datasheet characterization) |
| 腳位數 | — | 3 (Gate, Drain, Source) plus tab |