IRFR220NTRLPBF vs IRFR220NTRPBF 比較

詳細並排比較 IRFR220NTRLPBF 由 Infineon 與 IRFR220NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ 啟用中
Infineon
IRFR220NTRPBF IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF ✓ 啟用中

規格比較

參數 IRFR220NTRLPBF IRFR220NTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 200 V —
Continuous Drain Current (Id) at Tc=25C 5 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 0.800 ohm (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] 15 nC (typical per Mouser listing)
Gate-to-Drain Charge (Qgd) Low (per datasheet - HEXFET design) —
Power Dissipation (Pd) at Tc=25C 43 W —
工作溫度範圍 -55C to +150C (junction) —
封裝 TO-252AA (DPAK), 2 Leads + Tab, SC-63 TO-252AA (DPAK), surface mount
安裝類型 Surface Mount Surface Mount
MSL 等級 1 1 (unlimited floor life per JEDEC J-STD-020)
RoHS 狀態 Compliant (Pb-free PBF suffix) Compliant (PBF suffix)
Packaging Tape & Reel (Left orientation - TRLPBF) —
Avalanche Rated Yes (HEXFET ruggedized design) —
Technology Family HEXFET, Planar, Generation 3 —
FET Type — N-Channel MOSFET
Technology — HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-Resistance Rds(on) max at VGS=10V — 600 milliohm
Maximum Power Dissition (PD) at TC=25°C — 43 W
工作接面溫度 — -55°C to +150°C
Avalanche Energy Rated — Yes (fully characterized)
Lead-Free — Yes (PBF suffix indicates Pb-free plating)

資料表與資源

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