IRFR220NTRPBF vs IRFR2405TRPBF 比較

詳細並排比較 IRFR220NTRPBF 由 Infineon 與 IRFR2405TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR220NTRPBF IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF ✓ 啟用中
Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF ✓ 啟用中

規格比較

參數 IRFR220NTRPBF IRFR2405TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET N-Channel
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical]
On-Resistance Rds(on) max at VGS=10V 600 milliohm —
Total Gate Charge (Qg) 15 nC (typical per Mouser listing) 70 nC
Maximum Power Dissition (PD) at TC=25°C 43 W —
工作接面溫度 -55°C to +150°C -55C to +175C
封裝 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited floor life per JEDEC J-STD-020) 1
RoHS 狀態 Compliant (PBF suffix) Compliant (Lead-Free PBF suffix)
Avalanche Energy Rated Yes (fully characterized) —
Lead-Free Yes (PBF suffix indicates Pb-free plating) —
Manufacturer — Infineon Technologies
Part Status — Active
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 56 A
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
腳位數 — 3 (Gate, Drain, Source) + Tab
無鹵素 — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

資料表與資源

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