IRFR3710ZTRLPBF vs IRFL024ZTRPBF 比較

詳細並排比較 IRFR3710ZTRLPBF 由 Infineon 與 IRFL024ZTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR3710ZTRLPBF IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF ✓ 啟用中
Infineon
IRFL024ZTRPBF IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon

IRFL024ZTRPBF ✓ 啟用中

規格比較

參數 IRFR3710ZTRLPBF IRFL024ZTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), HEXFET HEXFET (IR MOSFET)
Drain to Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C (Tc) 42 A —
Max Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 18 mOhm —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th) typ) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) 69 nC —
Power Dissipation (Pd) @ Tc=25C 140 W —
Avalanche Energy Rating (EAS) 150 mJ —
Maximum Junction Temperature 175 C —
封裝 TO-252AA (DPAK), 3-pin (2+tab) SOT-223
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Lisleapex listing) —
Configuration Single with built-in diode —
工作溫度 -55 C to +175 C (TJ) —
RoHS 狀態 Compliant (Pb-free PBF suffix) Compliant
Drain-Source Voltage (Vds) — 55 V
Continuous Drain Current (Id) at Ta=25C — 5.1 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Rds(on) Max at Vgs=10V — 57.5 mOhm
Gate Charge (Qg) Typ — 9.1 nC
Gate-Source Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Power Dissipation (Pd) at Ta=25C — 1 W
工作溫度範圍 — -55C to +150C
腳位數 — 3 (+ drain tab)
MSL 等級 — 1
Lead-Free — Yes

資料表與資源

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