IRFR6215TRLPBF vs IRFR3710ZTRLPBF 比較
詳細並排比較 IRFR6215TRLPBF 由 Infineon 與 IRFR3710ZTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR6215TRLPBF | IRFR3710ZTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -150 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 580 mOhm | — |
| Total Gate Charge (Qg) typ | 44 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| 封裝 | TO-252AA (DPAK) | TO-252AA (DPAK), 3-pin (2+tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET (Fifth Generation) | MOSFET (Metal Oxide), HEXFET |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | Compliant (Pb-free PBF suffix) |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C (Tc) | — | 42 A |
| Max Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | — | 18 mOhm |
| Gate-Source Voltage (Vgs) max | — | [DATA_NEEDED: Vgs max rating] |
| Gate Threshold Voltage (Vgs(th) typ) | — | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | — | 69 nC |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| Avalanche Energy Rating (EAS) | — | 150 mJ |
| Maximum Junction Temperature | — | 175 C |
| Automotive Qualification | — | AEC-Q101 (per Lisleapex listing) |
| Configuration | — | Single with built-in diode |
| 工作溫度 | — | -55 C to +175 C (TJ) |