IRL540NSTRLPBF vs IRFS4321TRLPBF 比較

詳細並排比較 IRL540NSTRLPBF 由 Infineon 與 IRFS4321TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRL540NSTRLPBF IRFS4321TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25°C 36 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max @ VGS=10V 44 mΩ —
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-Source Voltage (VGS) max ±16 V —
Gate Threshold Voltage (VGS(th)) Logic-level —
Total Gate Charge (Qg) 49.3 nC —
Power Dissipation (PD) at Tc=25°C 140 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
工作溫度範圍 -55°C to +175°C —
封裝 TO-263 (D2PAK) TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (single-pulse) —
RoHS 狀態 Compliant (LPBF suffix indicates lead-free) Compliant
MSL 等級 [DATA_NEEDED: MSL rating] —
Drain-to-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at Tc=25C — 85 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
RDS(on) Max at VGS=10V — 15 mOhm
RDS(on) Max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-to-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) Typ — 71 nC
Total Gate Charge (Qg) Max — 110 nC
Power Dissipation (PD) at Tc=25C — 350 W
Thermal Resistance Junction-to-Case (RθJC) Max — 0.45 C/W
Thermal Resistance Junction-to-Case (RθJC) End-of-Life — 0.65 C/W (after 1000 cycles -55C to +150C)
工作接面溫度 — -55C to +175C
Technology — IR HEXFET (IR MOSFET)

資料表與資源

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