IRS2153DSTRPBF vs IRS2453DSTRPBF 比較

詳細並排比較 IRS2153DSTRPBF 由 Infineon 與 IRS2453DSTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRS2153DSTRPBF IRS2453DSTRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
拓撲 Half-Bridge Gate Driver with internal oscillator —
High-Side Floating Supply Absolute Max 600 V —
VDD Supply Voltage Range 10 V to 20 V —
Output Source Current (typ.) 0.18 A —
Output Sink Current (typ.) 0.26 A —
Internal Propagation Delay (typ.) 1.1 us —
Integrated Bootstrap FET Yes —
Oscillator Type RC-based, similar to CMOS 555 timer RC, CMOS 555-style front-end
Programmable Shutdown Pin Yes —
封裝 8-pin SOIC 14-SOIC (0.154", 3.90 mm)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +125C —
Technology HVIC + latch-immune CMOS HVIC and latch-immune CMOS
RoHS 狀態 Compliant Compliant (Pb-free per suffix "PBF")
Lead-Free Yes —
功能 — Full-bridge gate driver IC with integrated oscillator
Driver Configuration — High-side and low-side (full-bridge)
Number of Drivers — 4 (HO, LO outputs for two half-bridge legs)
Gate Drive Voltage (VCC) — [DATA_NEEDED: VCC operating range]
Input Voltage (VB offset) — 600 V (high-side offset rating)
Source Current (typ.) — 0.18 A
Sink Current (typ.) — 0.26 A
Bootstrap FET — Integrated
Shutdown Pin — Yes
Input Circuit — RC Input Circuit
工作溫度 — [DATA_NEEDED: operating temperature range]

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