IRS2302STRPBF vs IRS2011STRPBF 比較

詳細並排比較 IRS2302STRPBF 由 Infineon 與 IRS2011STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 啟用中

規格比較

參數 IRS2302STRPBF IRS2011STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge (High and Low Side, Independent) —
Number of Drivers 2 —
Supply Voltage (VCC) 5 V to 20 V 10 V to 20 V
Offset Voltage (High-Side) Up to +600 V —
Source Current (typ.) 0.2 A —
Sink Current (typ.) 0.35 A —
上升時間 130 ns (typ.) —
下降時間 50 ns (typ.) —
Propagation Delay 220 ns (typ.) —
Turn-On Delay [DATA_NEEDED: exact turn-on delay] —
Turn-Off Delay [DATA_NEEDED: exact turn-off delay] —
Logic Input Compatibility 3.3 V, 5 V, 15 V 3.3 V CMOS / LSTTL
Input Type Non-Inverting —
Shutdown Pin Yes —
UVLO Yes (VCC and VBS) —
Cross-Conduction Protection Yes (built-in dead time) —
工作溫度 -40C to +125C -40 C to +125 C
封裝 8-SOIC (3.90 mm body) 8-SOIC (DSO-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 2 (per JEDEC J-STD-020) —
無鹵素 Yes —
RoHS 狀態 Compliant Compliant (PBF suffix)
功能 — Half-Bridge Gate Driver
Configuration — High-Side and Low-Side, Independent Channels
輸出數量 — 2
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Negative Transient Tolerance — Yes, dV/dt immune
Suitable Drivers — MOSFETs and IGBTs

資料表與資源

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