ISC011N03L5SATMA1 vs IQDH35N03LM5CGATMA1 比較
詳細並排比較 ISC011N03L5SATMA1 由 Infineon 與 IQDH35N03LM5CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ 啟用中規格比較
| 參數 | ISC011N03L5SATMA1 | IQDH35N03LM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 / StrongIRFET 30 V | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| 封裝 | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 trench MOSFET |
| Gate Drive | Logic-level compatible | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 0.35 mΩ (typical at VGS=10 V) |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| 工作溫度範圍 | — | -55 °C to +175 °C |
| 無鹵素 | — | Yes |
| Channel Type | — | N-Channel |