ISC016N08NM8SCATMA1 vs IQE036N08NM6CGATMA1 比較
詳細並排比較 ISC016N08NM8SCATMA1 由 Infineon 與 IQE036N08NM6CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC016N08NM8SCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 8 | OptiMOS 6 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current at TA=25°C (ID) | 29 A | — |
| Continuous Drain Current at TC=25°C (ID) | 269 A | — |
| Power Dissipation at TC=25°C (PD) | 263 W | — |
| 封裝 | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | Trench MOSFET, OptiMOS 6 |
| 工作溫度範圍 | -55C to +175C | -55 C to +175 C (junction, Tj) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Configuration | — | Single N-channel, Source-Down |