ISC028N03LF2SATMA1 vs ISC030N12NM6ATMA1 比較
詳細並排比較 ISC028N03LF2SATMA1 由 Infineon 與 ISC030N12NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC028N03LF2SATMA1 | ISC030N12NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Technology | — | OptiMOS 6 (trench) |
| Drain-Source Voltage (VDS max) | — | 120 V |
| Continuous Drain Current (ID, Tc=25 C) | — | 194 A |
| Continuous Drain Current (ID, Ta) | — | 21 A |
| On-Resistance RDS(on) max | — | 3.4 mOhm @ VGS=10 V |
| On-Resistance RDS(on) typical | — | 3.0 mOhm @ VGS=10 V |
| 功率耗散 (TC=25°C) | — | 250 W |
| Power Dissipation (Ta) | — | 3 W |
| 工作溫度 | — | -55 C to +175 C (junction) |
| Gate Drive Voltage (recommended) | — | 10 V (full RDS(on)) |
| Configuration | — | Single N-channel, source-down |
| Packaging (suffix) | — | Tape & Reel (ATMA1) |
| RoHS | — | Compliant |