ISC046N13NM6ATMA1 vs ISC110N12NM6ATMA1 比較
詳細並排比較 ISC046N13NM6ATMA1 由 Infineon 與 ISC110N12NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC046N13NM6ATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | 120 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| 封裝 / 外殼 | PG-TDSON-8 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C | — |
| Technology | OptiMOS 6 trench MOSFET | — |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS 狀態 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 11 A |
| Continuous Drain Current (ID) at Tc | — | 62 A |
| On-Resistance RDS(on) max at VGS=10V | — | 9.8 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.1 V |
| Total Gate Charge (Qg) | — | 15.4 nC |
| Input Capacitance (Ciss) | — | 1.1 nF |
| Output Capacitance (Coss) | — | 330 pF |
| Reverse Transfer Capacitance (Crss) | — | 10 pF |
| Power Dissipation (Pd) at Tc | — | 94 W |
| Power Dissipation (Pd) at Ta | — | 3 W |
| Avalanche Energy (EAS) | — | 185 mJ |
| 工作接面溫度 | — | -55 °C to +175 °C |
| 封裝 | — | SuperSO8 (TDSON-8) |