ISCH57N04NM7VSCATMA1 vs ISC045N03L5SATMA1 比較

詳細並排比較 ISCH57N04NM7VSCATMA1 由 Infineon 與 ISC045N03L5SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISC045N03L5SATMA1 ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon

ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon

ISC045N03L5SATMA1 ✓ 啟用中

規格比較

參數 ISCH57N04NM7VSCATMA1 ISC045N03L5SATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology OptiMOS 7 (trench) OptiMOS 5 / Trench
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc [DATA_NEEDED: ID at Tc value, datasheet not in verified data] —
Pulsed Drain Current (IDM) at Tc 443 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 214 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] 13 nC @ VGS=10 V
工作溫度範圍 -55 C to +175 C (typical MOSFET junction range) -55 °C to +150 °C
封裝 PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) SuperSO8 5x6 (PG-TDSON-8-6)
安裝類型 Surface Mount Surface Mount
Configuration Single N-channel, source-down lead-frame —
Cooling Dual Side Cooled (top + bottom thermal interface) —
RoHS 狀態 Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — ISC045N03L5SATMA1
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 63 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 2 V @ ID=250 µA
Gate-Source Voltage (VGS) max — ±20 V
Input Capacitance (Ciss) — 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 30 W

資料表與資源

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