ISZ072N06NM6ATMA1 vs IQE018N06NM6CGATMA1 比較
詳細並排比較 ISZ072N06NM6ATMA1 由 Infineon 與 IQE018N06NM6CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISZ072N06NM6ATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 60V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| 功率耗散 (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| 封裝 | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TTFN-9-3 (TOLL/TTFN) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C ( Tj max 175C ) | -55C to +175C (junction) |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET, OptiMOS 6 |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | 1 | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Tc) | — | 125 W |
| RoHS Compliance | — | Compliant |