JMTG070N06A vs JMTG100N06A 比較

詳細並排比較 JMTG070N06A 由 Jiejie Micro 與 JMTG100N06A 由 Jiejie Micro. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Jiejie Micro
JMTG070N06A JMTG070N06A - 60V 70A N-Channel Power MOSFET | PDFN5x6-8L

JMTG070N06A - 60V 70A N-Channel Power MOSFET | PDFN5x6-8L

JMTG070N06A ✓ 啟用中
Jiejie Micro
JMTG100N06A JMTG100N06A - 60V 55A 7.7mΩ N-Ch Trench MOSFET | JieJie

JMTG100N06A - 60V 55A 7.7mΩ N-Ch Trench MOSFET | JieJie

JMTG100N06A ✓ 啟用中

規格比較

參數 JMTG070N06A JMTG100N06A
品牌 Jiejie Micro Jiejie Micro
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Jiejie Micro (JJW) Jiangsu JieJie Microelectronics Co., Ltd
Part Number JMTG070N06A —
Polarity / Type N-channel Enhancement Mode —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 70 A —
On-Resistance RDS(ON) < 6 mOhm @ VGS = 10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Technology Advanced Trench MOSFET —
封裝 PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) PDFN5x6-8L (Power DFN 5×6 mm, 8 leads)
安裝類型 Surface Mount (SMD) Surface Mount
Single Pulse Avalanche Energy (EAS) IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) —
Lead Status Lead free / RoHS compliant —
工作溫度範圍 [DATA_NEEDED: TJ max and operating range] —
Thermal Resistance RthJA [DATA_NEEDED: theta_JA] —
Configuration Single N-channel MOSFET —
電晶體類型 — N-Channel Power Trench MOSFET
Drain-Source Voltage V(DSS) — 60 V
Continuous Drain Current I(D) — 55 A (at V(GS)=10 V, T(C)=25 °C)
R(DS(on)) Typ @ V(GS)=10 V — 7.7 mΩ
R(DS(on)) Typ @ V(GS)=4.5 V — 8.9 mΩ
Gate Threshold Voltage V(GS(th)) Typ — 1.5 V
Plating — Pb-free
無鹵素 — Yes
RoHS — Compliant
UIS (Avalanche) Tested — 100 %
V(DS) Tested — 100 %
EAS Test Condition — T(J)=25 °C, V(DD)=30 V, V(G)=10 V, L=0.5 mH, R(g)=25 Ω, I(AS)=22 A
Primary Applications — Load Switch, PWM, DC-DC, Motor Drive

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