K3KL4L40EM-BGCU vs K3KL5L50DM-BGCU 比較

詳細並排比較 K3KL4L40EM-BGCU 由 Samsung Electro-Mechanics 與 K3KL5L50DM-BGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electro-Mechanics
K3KL4L40EM-BGCU K3KL4L40EM-BGCU - 12GB LPDDR5X DRAM 8533Mbps | Samsung

K3KL4L40EM-BGCU - 12GB LPDDR5X DRAM 8533Mbps | Samsung

K3KL4L40EM-BGCU ✓ 啟用中
Samsung Electronics
K3KL5L50DM-BGCU K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU ✓ 啟用中

規格比較

參數 K3KL4L40EM-BGCU K3KL5L50DM-BGCU
品牌 Samsung Electro-Mechanics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
庫存狀態 In Stock —
單價 (USD) $78.75 —
記憶體類型 LPDDR5X DRAM LPDDR5X SDRAM
Density 96 Gbit (12 GB) 128 Gb (16 GB)
組織 x64 [DATA_NEEDED: organization (x)]
資料速率 8533 Mbps 8533 Mbps per pin
介面 LPDDR5X (LPDDR5 JEDEC-based) LPDDR5X (JEDEC low-power DRAM interface)
封裝 496-ball FBGA [DATA_NEEDED: package ball count / FBGA code]
安裝類型 Surface Mount Surface Mount (BGA)
供應電壓 [DATA_NEEDED: core supply voltage (VDD)] —
Application Tablet, Smartphone, Wearable Devices —
Product Family Samsung LPDDR5X (K3KL4L40EM series) —
Companion Densities 64 Gbit (K3KL3L30DM-BGCU), 128 Gbit (K3KL5L50DM-BGCU) —
Power Characteristic Ultra-low-power mobile DRAM —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 狀態 unknown unknown
Ball Count 496 —
Storage Class Volatile memory (DRAM) —
Supply Voltage (VDD) — [DATA_NEEDED: VDD voltage]
Prefetch — 16n (LPDDR5/5X architecture)
Power Efficiency — approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page)
CAS 延遲 — [DATA_NEEDED: CAS latency]
Refresh — [DATA_NEEDED: refresh scheme]
Production Status — In production (in stock at distributors)
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

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