K3LK4K40CM-BGCP vs K3LKCKC0BM-MGCP 比較
詳細並排比較 K3LK4K40CM-BGCP 由 Samsung Electronics 與 K3LKCKC0BM-MGCP 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3LK4K40CM-BGCP | K3LKCKC0BM-MGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5 SDRAM | LPDDR5 SDRAM (DRAM) |
| Density | 96 Gb (12 GB) | — |
| 組織 | 1536M x 64 | — |
| 資料速率 | 6400 Mbps per pin | 6400 Mbps |
| Supply Voltage (VDD) | 1.05 V | — |
| 封裝 | 496-ball FBGA | FBGA-315 (PBGA315) |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | LPDDR5 (JEDEC) | Parallel |
| 工作溫度 | [DATA_NEEDED: Operating Temperature] | -25 C to +85 C |
| Access Time / CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Refresh Scheme | Per-bank / all-bank refresh | — |
| Power-Down Modes | Deep sleep / power-down supported | — |
| Application Segment | Mobile, embedded, computing modules | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | Compliant |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| 記憶體容量 | — | 64 Gbit |
| Memory Organization | — | 2G x32 |
| Technology | — | CMOS |
| Supply Voltages | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| Volatile / Non-Volatile | — | Volatile |
| Clock Frequency | — | [DATA_NEEDED: clock frequency] |
| Access Time | — | [DATA_NEEDED: access time] |
| Power Consumption - Active | — | [DATA_NEEDED: active power] |
| Power Consumption - Standby | — | [DATA_NEEDED: standby power] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |