K3LK4L40DM-BGCT vs K3KL2L20DM-JGCT 比較
詳細並排比較 K3LK4L40DM-BGCT 由 Samsung Electronics 與 K3KL2L20DM-JGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 啟用中
規格比較
| 參數 | K3LK4L40DM-BGCT | K3KL2L20DM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DRAM (SDRAM component) | LPDDR5X SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 48 Gb |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| 資料速率 | [DATA_NEEDED: Data Rate] | 7500 Mbps |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | -25C to +85C |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | unknown |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL 等級 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| 組織 | — | x64 |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| 封裝 | — | 441-ball FBGA |
| 介面 | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |