K3LKCKC0BM-MGCP vs K3LK4K40CM-BGCP 比較
詳細並排比較 K3LKCKC0BM-MGCP 由 Samsung Electronics 與 K3LK4K40CM-BGCP 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3LKCKC0BM-MGCP | K3LK4K40CM-BGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5 SDRAM (DRAM) | LPDDR5 SDRAM |
| 記憶體容量 | 64 Gbit | — |
| Memory Organization | 2G x32 | — |
| 資料速率 | 6400 Mbps | 6400 Mbps per pin |
| 介面 | Parallel | LPDDR5 (JEDEC) |
| Technology | CMOS | — |
| Supply Voltages | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| 工作溫度 | -25 C to +85 C | [DATA_NEEDED: Operating Temperature] |
| 封裝 | FBGA-315 (PBGA315) | 496-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Volatile / Non-Volatile | Volatile | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS Status] |
| Clock Frequency | [DATA_NEEDED: clock frequency] | — |
| Access Time | [DATA_NEEDED: access time] | — |
| Power Consumption - Active | [DATA_NEEDED: active power] | — |
| Power Consumption - Standby | [DATA_NEEDED: standby power] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 96 Gb (12 GB) |
| 組織 | — | 1536M x 64 |
| Supply Voltage (VDD) | — | 1.05 V |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Scheme | — | Per-bank / all-bank refresh |
| Power-Down Modes | — | Deep sleep / power-down supported |
| Application Segment | — | Mobile, embedded, computing modules |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |