K4A4G165WD-BCPB vs K4A4G165WD-BCRC 比較
詳細並排比較 K4A4G165WD-BCPB 由 Samsung Electronics 與 K4A4G165WD-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G165WD-BCPB | K4A4G165WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 組織 | 256M x 16 | 256M x 16 |
| 資料速率 | 2133 MT/s | — |
| Core Voltage | 1.2 V | — |
| 封裝 | FBGA-96 | FBGA-96 |
| 安裝類型 | Surface Mount | Surface Mount |
| Die Generation | D-die | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| CAS 延遲 | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | — |
| 介面 | DDR4 (synchronous, source-synchronous strobe) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| RoHS 狀態 | Compliant (lead-free suffix) | Lead free / RoHS Compliant |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | — |
| Speed Bin | — | DDR4-2400 (BCRC) |
| 供應電壓 | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| 介面類型 | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |