K4A4G165WE-BCTD vs K4A4G165WF-BCTD 比較
詳細並排比較 K4A4G165WE-BCTD 由 Samsung Electronics 與 K4A4G165WF-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G165WE-BCTD | K4A4G165WF-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $8.20 |
| 記憶體類型 | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | — |
| 介面 | Parallel, x16 | SSTL-12 |
| Supply Voltage (VDD) | 1.2 V (1.14 V to 1.26 V) | — |
| Die Generation | E-die | — |
| 封裝 | FBGA-96 (TFBGA) | FBGA-96 (PBGA96) |
| Terminal Count | 96 | — |
| 工作溫度 | 0C to +85C | 0C to +95C |
| 安裝類型 | Surface Mount | Surface Mount |
| Speed Grade | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] | — |
| RoHS 狀態 | Compliant (per JLCPCB listing) | Compliant |
| Product Status | Active | — |
| Datasheet Revision | K4A4G165WE Rev. 1.4, Jun. 2016 | — |
| Burst Length | BL8 (JEDEC DDR4) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| 組織 | — | 256M x 16 |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| 功能特色 | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |
| Refresh | — | Self-refresh and auto-refresh supported |