K4A4G165WF-BCTD vs K4A4G165WD-BCTD 比較
詳細並排比較 K4A4G165WF-BCTD 由 Samsung Electronics 與 K4A4G165WD-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G165WF-BCTD | K4A4G165WD-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $8.20 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | — |
| 組織 | 256M x 16 | 256M x 16 |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| 介面 | SSTL-12 | SSTL-12 |
| 封裝 | FBGA-96 (PBGA96) | 96-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 工作溫度 | 0C to +95C | 0C to +85C (commercial) |
| 功能特色 | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| 資料速率 | — | 2666 Mbps/pin (-BCTD speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Core Supply (VPP) | — | 2.5 V |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes (external RZQ resistor) |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |