K4A4G165WG-BCWE vs MT40A512M16LY-062E AAT:E 比較
詳細並排比較 K4A4G165WG-BCWE 由 Samsung Electronics 與 MT40A512M16LY-062E AAT:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron
MT40A512M16LY-062E AAT:E ✓ 啟用中規格比較
| 參數 | K4A4G165WG-BCWE | MT40A512M16LY-062E AAT:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $16.90 | — |
| 記憶體類型 | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | 8 Gbit (1 GB) |
| Memory Organization | 256M x 16 | 512M x 16 |
| 介面 | Parallel | Parallel |
| 資料速率 | 3200 Mbps | — |
| Access Time | 19 ns | 19 ns |
| 供應電壓 | 1.2 V | 1.2 V |
| 工作溫度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封裝 | FBGA-96 | 96-FBGA (7.5 x 13.5 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| RoHS 狀態 | Compliant (per JLCPCB listing) | Compliant |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | 1.6 GHz |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval] | — |
| Speed Grade | — | 062E |
| Package Height | — | [DATA_NEEDED: package max height] |
| MSL Rating | — | [DATA_NEEDED: moisture sensitivity level] |
| Ordering Code Suffix | — | AAT:E (temperature/package option per Micron code) |
| Moisture Packaging | — | [DATA_NEEDED: packing type for AAT:E suffix] |
| Data Rate Class | — | DDR4-3200 (062E speed bin) |