K4A8G085WB vs K4A8G085WB-BCTD 比較
詳細並排比較 K4A8G085WB 由 Samsung Electronics 與 K4A8G085WB-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WB | K4A8G085WB-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $8.53 |
| 記憶體類型 | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| 組織 | 1G x 8 | 1G x 8 |
| 供應電壓 | 1.2 V | 1.2 V |
| 封裝 | 78-pin FBGA | FBGA-78 (78-ball TFBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Mode | DLL Enabled mode (per datasheet) | — |
| Speed Grade Suffixes | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) | — |
| 資料速率 | [DATA_NEEDED: speed grade data rate in Mbps] | 2666 Mbps |
| tCL/cas latency | [DATA_NEEDED: CAS latency] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | — |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Termination Voltage (VTT) | [DATA_NEEDED: VTT value] | — |
| Die Revision | — | B-die |
| Bank Structure | — | 16 banks, 4 bank groups |
| Burst Length | — | BL8 |
| Termination | — | On-Die Termination (ODT), dynamic ODT |
| 功能特色 | — | ZQ calibration, CRC, CA parity, asynchronous reset |
| Speed Bin | — | -BCTD (CL-tRCD-tRP bin) |
| Terminations | — | 78 |
| JEDEC-30 Package Code | — | R-PBGA-B78 |