K4A8G085WC-BCTD vs H5AN8G8NCJR-VKI 比較
詳細並排比較 K4A8G085WC-BCTD 由 Samsung Electronics 與 H5AN8G8NCJR-VKI 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ 最後購買機會規格比較
| 參數 | K4A8G085WC-BCTD | H5AN8G8NCJR-VKI |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 最後購買 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 組織 | 1G x 8 | — |
| 資料速率 | 2666 Mbps (PC4-2133) | 2666 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| 封裝 | 78-ball FBGA (78FBGA) | FBGA-78 |
| Ball Pitch | 0.8 mm | — |
| 工作溫度 | 0C to +95C | [DATA_NEEDED: Operating Temperature] |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| 介面類型 | Synchronous, parallel | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 1G x8 |
| 供應電壓 | — | 1.2 V |
| 介面 | — | Parallel |
| Memory Format | — | DRAM |
| Volatile | — | Yes |
| Grade | — | Industrial (I suffix) |
| Technology | — | CMOS |
| Product Family | — | H5AN8G8NCJR-xxC/xI DDR4 SDRAM |
| Packaging | — | Tray |
| Product Status | — | Active |