K4A8G165WG-BCWE vs MT40A512M16LY-062E AAT:E 比較
詳細並排比較 K4A8G165WG-BCWE 由 Samsung Electronics 與 MT40A512M16LY-062E AAT:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron
MT40A512M16LY-062E AAT:E ✓ 啟用中規格比較
| 參數 | K4A8G165WG-BCWE | MT40A512M16LY-062E AAT:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $35.98 | — |
| 記憶體類型 | DDR4 SDRAM (Volatile DRAM) | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | 8 Gbit (1 GB) |
| Memory Organization | 512M x 16 | 512M x 16 |
| 介面 | Parallel | Parallel |
| Max Data Rate | 3200 Mbps/pin | — |
| Clock Cycle Time | 19 ns | — |
| 供應電壓 | 1.2 V | 1.2 V |
| 封裝 | FBGA-96 (BGA-96), surface mount | 96-FBGA (7.5 x 13.5 mm) |
| 工作溫度 | 0C to +85C (commercial) | [DATA_NEEDED: operating temperature range] |
| Refresh | Auto/self refresh per DDR4 standard | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | Samsung Semiconductor, Inc. | — |
| Product Status | Active | — |
| Typical Standby Current | 20 mA (per LCSC listing) | — |
| Die Generation | Samsung B-die, 8Gb DDR4 x16 | — |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 19 ns |
| Speed Grade | — | 062E |
| Package Height | — | [DATA_NEEDED: package max height] |
| MSL Rating | — | [DATA_NEEDED: moisture sensitivity level] |
| Ordering Code Suffix | — | AAT:E (temperature/package option per Micron code) |
| Moisture Packaging | — | [DATA_NEEDED: packing type for AAT:E suffix] |
| Data Rate Class | — | DDR4-3200 (062E speed bin) |