K4B4G1646D-BCK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN： K4B4G1646D-BCK0 ✓ 啟用中K4B4G1646D-BCK0 概覽
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3, allowing flexible system design.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports burst lengths of 8 and 4, and features auto-refresh and self-refresh modes for power saving. The 96-ball FBGA package provides excellent thermal and electrical performance, making it suitable for space-constrained designs.
The K4B4G1646D-BCK0 utilizes Samsung's advanced D-die process technology, offering improved performance and lower power consumption compared to previous generations. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing reliability in varying thermal conditions.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, and embedded systems. It is also used in industrial and automotive applications where low power and high reliability are critical. The device's 1.35V operation makes it ideal for battery-powered devices.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The VDD and VDDQ supplies should be filtered with 0.1uF and 10uF capacitors. Also, follow the PCB layout guidelines in the datasheet to maintain signal integrity at high speeds.
直接替換替代品，適用於 K4B4G1646D-BCK0 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4B4G1646D-BCK0 （相同外形與佔位） — 差異在於 Package, CAS Latency, Operating Temperature, Data Rate, Supply Voltage.
K4B4G1646E-BYK0
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BMK0
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BYK00
✅ 直接替換聯絡詢價
查看資料表 →MT41K256M16HA-125
✅ 直接替換✗ 缺貨
$6.3636 / 單位
查看資料表 →MT41K256M16TW-107
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.1 / 單位
查看資料表 →AS4C256M16D3L-12BCN
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4B4G1646D-BCK0 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4 Gb |
| 組織 | 256M x 16 |
| Number of Banks | 8 |
| 資料速率 | 1600 Mbps per pin |
| Clock Frequency | 800 MHz |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) |
| CAS 延遲 | 11 (programmable) |
| Burst Length | 8, 4 |
| 封裝 | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| 工作溫度 | 0°C to 95°C (Tc) |
| RoHS | Compliant |
| Lead-Free | Yes |
| 無鹵素 | Yes |
K4B4G1646D-BCK0 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDDQ — I/O power supply |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ8 — Data input/output 8 |
| 腳位 B3 | DQ9 — Data input/output 9 |
| 腳位 B4 | VDD — Power supply |
| 腳位 B5 | DQ10 — Data input/output 10 |
| 腳位 B6 | DQ11 — Data input/output 11 |
| 腳位 B7 | VSS — Ground |
| 腳位 B8 | DQ12 — Data input/output 12 |
| 腳位 B9 | DQ13 — Data input/output 13 |
| 腳位 B10 | VDDQ — I/O power supply |
| 腳位 B11 | DQ14 — Data input/output 14 |
| 腳位 B12 | DQ15 — Data input/output 15 |
典型應用
K4B4G1646D-BCK0 適用於 6 應用s: Laptop Memory Modules, Networking Equipment, Embedded Systems, Automotive Infotainment, Industrial PCs, Consumer Electronics.
Laptop Memory Modules
The K4B4G1646D-BCK0 is ideal for laptop memory modules (SO-DIMM) due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization allow for compact module designs. The DDR3-1600 speed meets the performance requirements of mainstream laptops, providing a balance between speed and power efficiency. When used in a SO-DIMM, the device's 96-ball FBGA package enables high-density assembly on small PCBs. The low operating voltage also reduces heat generation, improving thermal management in thin laptops.
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Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BCK0 provides high-bandwidth memory for packet buffering and routing tables. Its 1600 Mbps data rate ensures fast data throughput, while the 1.35V operation reduces power consumption in always-on devices. The 96-ball FBGA package allows for compact PCB layouts, essential for high-port-count designs. The device's on-die termination and internal calibration features help maintain signal integrity in high-speed digital environments, reducing bit errors and improving reliability. This makes it suitable for enterprise and carrier-grade networking hardware.
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Embedded Systems
The K4B4G1646D-BCK0 is well-suited for embedded systems like single-board computers and industrial controllers. Its 4Gb density provides ample memory for operating systems and applications, while the x16 interface simplifies connection to microprocessors. The 1.35V operation is compatible with low-power embedded processors, and the commercial temperature range (0°C to 95°C) covers typical indoor environments. The device's self-refresh and auto-refresh modes help reduce power in idle states, which is critical for battery-powered or energy-efficient embedded designs. The FBGA package is robust for industrial environments.
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Automotive Infotainment
In automotive infotainment systems, the K4B4G1646D-BCK0 provides reliable memory for navigation, multimedia, and connectivity features. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the commercial temperature range is suitable for cabin environments. The device's high-speed data transfer supports smooth video playback and responsive user interfaces. The 96-ball FBGA package withstands vibration and thermal cycling typical in automotive applications. While not AEC-Q100 qualified, it can be used in non-safety-critical infotainment systems where standard commercial components are acceptable.
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Industrial PCs
The K4B4G1646D-BCK0 is used in industrial PCs for factory automation and process control. Its 4Gb density supports multitasking and data logging, while the 1.35V operation reduces heat in sealed enclosures. The device's reliability and long lifecycle make it suitable for industrial applications where downtime is costly. The FBGA package provides good thermal dissipation, and the device's internal calibration ensures stable operation over temperature variations. It is compatible with industrial-grade motherboards that support DDR3L memory.
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Consumer Electronics
In consumer electronics like smart TVs and set-top boxes, the K4B4G1646D-BCK0 provides cost-effective memory for streaming and app execution. Its 1.35V operation reduces power consumption, contributing to energy-efficient designs. The 4Gb density is sufficient for modern consumer applications, and the x16 interface simplifies PCB routing. The device's small FBGA package enables slim product designs. The commercial temperature range covers typical home environments, and the RoHS compliance meets environmental regulations.
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推薦產品摘要
工程參考資料，適用於 K4B4G1646D-BCK0 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4B4G1646E-BYK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1866 Mbps | 1866 Mbps | 1600 Mbps |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Lower operating voltage (1.35V) compared to standard DDR3 (1.5V) (對比MT41K256M16HA-125)
- D-die process technology (對比K4B4G1646E-BYK0)
- Wide availability and ecosystem support (對比AS4C256M16D3L-12BCN)
設計說明
Ensure stable power supply to VDD and VDDQ pins. Use 0.1uF ceramic capacitors close to each power pin and a 10uF bulk capacitor per supply rail. The DDR3L operates at 1.35V, so verify the power supply can provide adequate current during burst operations. Follow the power-up sequence specified in the datasheet to avoid latch-up.
Maintain controlled impedance for DQ, DQS, and address/command lines. Use 50-ohm single-ended and 100-ohm differential traces. Keep trace lengths matched within 50 mils for data lines and 100 mils for address/command. Place the device close to the memory controller to minimize propagation delay. Use ground planes to reduce noise.
The K4B4G1646D-BCK0 has a maximum power dissipation of approximately 1.5W during active operation. Ensure adequate airflow or a thermal pad to keep the case temperature below 95°C. In high-density designs, consider thermal vias under the FBGA package to improve heat transfer to the PCB.
合規資訊
RoHS compliant and halogen-free per datasheet. Not AEC-Q100 qualified.
