K4RHE086VB-BCWM vs K4RBH165VB-BCWM 比較
詳細並排比較 K4RHE086VB-BCWM 由 Samsung Electronics 與 K4RBH165VB-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RHE086VB-BCWM | K4RBH165VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | 16 Gbit |
| 組織 | 2G x 8 | 1G x 16 |
| 資料速率 | 5600 Mbps | — |
| 供應電壓 | 1.1 V | — |
| 封裝 | 82 FBGA | FBGA-106 |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR5 (JEDEC) | — |
| Configuration | x8 | — |
| Application Segment | Server / Data Center / Premium PC | — |
| Manufacturer | Samsung Semiconductor | — |
| RoHS 狀態 | unknown | Compliant |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Access Time / CAS Latency | [DATA_NEEDED: CAS latency] | — |
| On-Die ECC | [DATA_NEEDED: on-die ECC support] | Yes |
| Package Height | [DATA_NEEDED: package height] | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Data Rate Class | — | DDR5 5600 Mbps (family per Octopart listing of sibling part) |
| Write CRC | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Operating Mode | — | DLL Enabled |
| Lead Free | — | Yes |
| MSL 等級 | — | [DATA_NEEDED: MSL Level] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |