K9F6408Q0C vs K9F2808Q0B 比較
詳細並排比較 K9F6408Q0C 由 Samsung Electronics 與 K9F2808Q0B 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics
K9F6408Q0C Obsolete規格比較
| 參數 | K9F6408Q0C | K9F2808Q0B |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | Obsolete | 停產終止 |
| 記憶體類型 | NAND Flash (SLC) | SLC NAND Flash (parallel) |
| Memory Capacity | 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) | — |
| 組織 | 8M x 8 | 16M x 8 |
| 介面 | Parallel, 8-bit multiplexed I/O | 8-bit multiplexed address/data |
| Operating Voltage (VCC) | 1.65 V to 1.95 V | 1.7 V to 1.95 V |
| Access Time | 10 us (read cycle, family listing) | — |
| Page Size | 528 bytes (512 data + 16 spare) | [DATA_NEEDED: page size] |
| Temperature Grade | C (commercial), i (industrial) | C (commercial), I (industrial) |
| Package (HIB0 variant) | 48-ball TBGA | — |
| Package (family TBGA note) | 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Spare Area | 256K x 8 bit | — |
| Control Signals | CLE, ALE, CE, WE, RE, WP, R/B | — |
| Bad Block Management | Host-managed (marking in spare area) | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | unknown |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 128 Mbit |
| Read Access Speed | — | 50 ns |
| Cell Type | — | SLC (1 bit/cell) |
| 封裝 | — | 63-pin TBGA |
| Block Size | — | [DATA_NEEDED: block size] |
| Typical Read Current (Icc1) | — | [DATA_NEEDED: Icc1] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Production Status | — | Mass production (per legacy datasheet); now EOL/obsolete |