K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
MPN： K9F2808Q0B ✗ 停產K9F2808Q0B 概覽
NAND Flash is a non-volatile memory technology that stores data in floating-gate cells arranged in series, enabling high density at low cost per bit. Within the memory hierarchy, NAND Flash sits alongside NOR Flash as a mass-storage medium: NOR offers random access for code execute-in-place, while NAND offers higher density and faster program/erase throughput, making it the standard choice for data storage in embedded systems. The K9F2808Q0B belongs to Samsung's early small-block SLC NAND family, using a multiplexed 8-bit address/data bus with command, address, and data latched on the I/O pins.
Key features include single-level-cell (SLC) technology for the highest endurance and reliability among Flash types, a low-voltage 1.8 V operating rail that reduces system power compared with 3.3 V devices, and a 16M x 8 organization with an 8-bit multiplexed I/O interface. Access control is handled through standard NAND command latches (CLE/ALE), with ready/busy signaling for program and erase operations.
Architecturally, the device divides the 128 Mbit array into pages and blocks; pages are the unit of programming and blocks the unit of erase, as detailed in the Samsung datasheet. SLC storage of one bit per cell delivers fast program times and wide noise margins relative to later multi-level-cell devices.
Typical applications include embedded system boot and configuration storage, set-top boxes, industrial data loggers, and legacy equipment maintenance where the 1.8 V rail and 63-TBGA footprint are already designed in.
When designing with this device, implement ECC (at minimum 1-bit correction per page, per Samsung SLC recommendations) and manage block wear in the controller or driver layer, since NAND blocks have limited erase cycles.
This page synthesizes datasheet parameters, family cross-references, and practical design guidance not consolidated on distributor pages. Pricing as of 2026-09-04.
直接替換替代品，適用於 K9F2808Q0B — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K9F2808Q0B （相同外形與佔位） — 差異在於 Memory Type, Interface, Organization, Package, Density.
K9F6408Q0C
✅ 直接替換聯絡詢價
查看資料表 →K9F6408U0B
✅ 直接替換聯絡詢價
查看資料表 →K9F2808U0B-DCB0
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
K9F2808U0B-DIB0
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
K9F2808Q0B 最大額定值與電氣特性
| 記憶體類型 | SLC NAND Flash (parallel) |
| Density | 128 Mbit |
| 組織 | 16M x 8 |
| Operating Voltage (VCC) | 1.7 V to 1.95 V |
| Read Access Speed | 50 ns |
| Cell Type | SLC (1 bit/cell) |
| 介面 | 8-bit multiplexed address/data |
| 封裝 | 63-pin TBGA |
| Temperature Grade | C (commercial), I (industrial) |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | unknown |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete |
K9F2808Q0B 63-pin tbga 腳位配置指南
K9F2808Q0B（63-pin tbga 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K9F2808Q0B.
請參閱 資料表 以查看完整腳位配置。
典型應用
K9F2808Q0B 適用於 6 應用s: Embedded System Boot Storage, Set-Top Box and Consumer Electronics Firmware, Industrial Data Loggers, Legacy Equipment Maintenance and Repair, Handheld and Portable Instruments, Networking Equipment Configuration Storage.
Embedded System Boot Storage
The K9F2808Q0B stores boot code and configuration parameters in embedded systems where the processor already boots from a Samsung small-block NAND command set. Its 16M x 8 organization provides 16 MB of code space - ample for bootloaders, kernel images, and factory settings - while the 1.7 V to 1.95 V rail matches modern low-voltage microcontroller I/O. SLC cells retain data reliably across power cycles with 50 ns read access for fast boot sequencing. Designers must implement 1-bit-per-page ECC and bad-block scanning at the boot driver level, per Samsung's small-block NAND management scheme, since raw NAND requires controller-side error handling.
推薦
Set-Top Box and Consumer Electronics Firmware
In set-top boxes and consumer media devices of the K9F design generation, the K9F2808Q0B held firmware images and channel/configuration databases on a 1.8 V rail that reduced system power versus 3.3 V NAND. The 128 Mbit density accommodated complete firmware plus user preference storage, and the 50 ns read speed supported in-place reads during firmware validation. The 63-pin TBGA package enabled compact two-sided board assembly in slim consumer enclosures. SLC endurance suited devices that rewrite settings daily; systems performing frequent recording needed external wear-leveling software to distribute erase cycles across the block array.
推薦
Industrial Data Loggers
Industrial data loggers used the K9F2808Q0B to record sensor samples and event logs, exploiting the industrial (I) temperature grade (ordering variants such as -DIB0) and SLC reliability. The 1.8 V supply reduced logger power draw during battery operation, and the multiplexed 8-bit interface connected easily to low-pin-count microcontrollers through GPIO or memory controllers. The 16 MB capacity stored months of timestamped records, while SLC's wide noise margins protected data against the electrical noise typical of factory floors. Loggers must implement block wear leveling and power-fail recovery, since program interruption mid-page can corrupt the page, per Samsung's NAND management guidelines.
推薦
Legacy Equipment Maintenance and Repair
For maintaining installed bases of equipment designed around the K9F2808Q0B, service organizations source this exact MPN because firmware images and address maps are hard-coded to its 16M x 8 geometry and 1.8 V rail. The 63-pin TBGA footprint and Samsung command-set timing mean a same-MPN replacement restores operation without firmware changes. Repair stock should be date-code controlled, since stored SLC NAND can accumulate bit errors over many years; reprogramming the spare parts and verifying ECC counters during service is recommended. Aftermarket channels and quote-based sourcing are the realistic acquisition paths given the part's EOL status.
推薦
Handheld and Portable Instruments
Battery-powered handheld instruments adopted the K9F2808Q0B because its 1.7 V to 1.95 V operation allowed direct connection to single-cell rail systems, minimizing converter stages. Typical read current figures (revised in the datasheet history, originally around 5 mA class) kept average drain low between measurement bursts, while the 50 ns access time let instrument firmware read calibration tables without delaying measurements. The TBGA package withstood portable mechanical stress better than thin plastic leaded packages when properly underfilled. Designers should buffer the R/B output and manage CE during sleep states to minimize standby current in duty-cycled instruments.
推薦
Networking Equipment Configuration Storage
Routers, switches, and access points of the K9F generation stored MAC addresses, configuration files, and failsafe boot images on the K9F2808Q0B. The 16 MB capacity covered a compressed firmware image plus dual-config schemes, and SLC endurance handled frequent configuration writes in the field. The 1.8 V rail matched the low-voltage memory subsystems of networking SoCs of that era, and the TBGA package suited high-density line-card assemblies. Network equipment requires failsafe dual-image designs, so two power-fail-safe update procedures with rollback pointers in spare area were standard practice on this class of raw NAND.
推薦
推薦產品摘要
工程參考資料，適用於 K9F2808Q0B — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K9F6408Q0C | K9F6408U0B | K9F2808U0B-DCB0 |
|---|---|---|---|---|
| Package | 63-pin TBGA | 63-TBGA family - same | 63-TBGA family - same | 63-TBGA family - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 128 Mbit (16M x 8) | 64 Mbit (8M x 8) | 64 Mbit (8M x 8) | 128 Mbit (16M x 8) |
| Supply Voltage | 1.7 V to 1.95 V | 1.8 V class (Q-series) | 3.3 V class (U-series) | 3.3 V class (U-series) |
| Cell Type | SLC | SLC | SLC | SLC |
| Lifecycle Status | EOL | EOL (legacy family) | EOL (legacy family) | EOL (legacy family) |
主要差異化特點
- Full 128 Mbit capacity on a 1.8 V rail (對比K9F6408Q0C)
- 1.8 V operation vs 3.3 V siblings (對比K9F2808U0B-DCB0)
- SLC reliability with 50 ns read access (對比K9F6408U0B)
設計說明
The 8-bit multiplexed I/O bus of the K9F2808Q0B relies on clean CLE/ALE/WE/RE timing; keep command and address latch setup/hold within the datasheet AC limits and keep bus traces short (under ~10 cm at this speed class). Termination is generally unnecessary at 1.8 V NAND speeds, but series resistors of 22-33 ohms on WE/RE damp ringing on longer traces. Ensure R/B is treated as open-drain with a pull-up appropriate to the 1.8 V rail - typically 10 kohm.
Never connect the K9F2808Q0B to a 3.3 V rail - it is the 1.8 V (1.7-1.95 V) member of the K9F2808 family, while the U0B suffix denotes the 3.3 V device. Additionally, raw NAND requires controller-side ECC (1-bit per page for SLC) and bad-block management; writing data without ECC and without marking factory bad blocks will cause silent data corruption. Check the initial bad-block table shipped in the device before first use, per Samsung's small-block NAND application guidance.
Decouple VCC with at least 0.1 uF ceramic close to each supply ball plus 4.7-10 uF bulk capacitance, since program operations draw current pulses on the 1.8 V rail. Estimated: if the revised typical read current is in the several-mA class (datasheet history notes Icc1 was changed from 5 mA), a stable 1.8 V LDO rated at 50-100 mA provides ample margin including program/erase peaks; verify peak program current against the latest datasheet revision before finalizing the regulator.
合規資訊
This is a legacy EOL part predating modern environmental declarations; Samsung's current compliance databases no longer list it. Verify RoHS/lead status with the specific date code and package suffix when sourcing aftermarket stock.
