K9F6408U0B vs K9PDG08U5M 比較
詳細並排比較 K9F6408U0B 由 Samsung Electronics 與 K9PDG08U5M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9F6408U0B | K9PDG08U5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | Obsolete | 停產終止 |
| Memory Organization | 8M x 8 bit (64Mbit) | — |
| 記憶體類型 | NAND Flash | NAND Flash (SLC) |
| Operating Voltage (VCC) | 2.7 V to 3.6 V | — |
| Access Time / Cycle Time | 50 ns | — |
| 封裝 | 44-TSOP2 | TSOP1-48 |
| Page Size | 528 bytes (512 data + 16 spare) | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block organization from datasheet] | [DATA_NEEDED: block size] |
| Program/Erase Endurance | 100K program/erase cycles | — |
| 介面 | 8-bit multiplexed command/address/data I/O | — |
| Write Protect | Yes (WP pin) | — |
| Ready/Busy Output | Yes (R/B open-drain) | Yes (R/B, open-drain) |
| Operating Temperature (TCB0 grade) | 0C to 70C | — |
| Operating Temperature (TIB0 grade) | -40C to 85C | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Production Status (per datasheet) | Mass Production (legacy; now obsolete) | — |
| Density | — | 4 Gbit |
| 組織 | — | x8 (multiplexed I/O) |
| 供應電壓 | — | [DATA_NEEDED: supply voltage range] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Write Protect Pin | — | Yes (/WP) |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |