K9LUGY8J7D-CCK0 vs K9IUGY8J7B-CCK0 比較
詳細並排比較 K9LUGY8J7D-CCK0 由 Samsung Electronics 與 K9IUGY8J7B-CCK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ 啟用中規格比較
| 參數 | K9LUGY8J7D-CCK0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| 記憶體類型 | NAND Flash (V-NAND) | NAND Flash, 3D V-NAND TLC |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | — |
| 封裝 | BGA (surface mount) | — |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 介面 | [DATA_NEEDED: interface type / toggle DDR mode] | — |
| Density | [DATA_NEEDED: total density (bits)] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| 供應電壓 | [DATA_NEEDED: supply voltage (V)] | — |
| 工作溫度 | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Memory Density | — | 1 Tb (Tera bit) |
| Cell Type | — | TLC (3 bits per cell) |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| 介面類型 | — | [DATA_NEEDED: bus interface type] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| 資料匯流排寬度 | — | [DATA_NEEDED: data bus width] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: exact package code] |