K9QDGB8U7M vs K9PDG08U5M 比較

詳細並排比較 K9QDGB8U7M 由 Samsung Electronics 與 K9PDG08U5M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K9QDGB8U7M K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M Unknown
Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ 停產

規格比較

參數 K9QDGB8U7M K9PDG08U5M
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs EEPROM
生命週期狀態 Unknown 停產終止
Manufacturer Samsung Electronics —
Product Family K9 NAND Flash —
記憶體類型 NAND Flash NAND Flash (SLC)
Density [DATA_NEEDED: Density] 4 Gbit
組織 [DATA_NEEDED: Organization] x8 (multiplexed I/O)
介面類型 [DATA_NEEDED: Interface Type] —
供應電壓 [DATA_NEEDED: Supply Voltage] [DATA_NEEDED: supply voltage range]
Page Size [DATA_NEEDED: Page Size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: Block Size] [DATA_NEEDED: block size]
Program/Erase Endurance [DATA_NEEDED: Program/Erase Endurance] —
Read Latency [DATA_NEEDED: Read Latency] —
Package Type BGA (surface mount) —
工作溫度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
安裝類型 Surface Mount Surface Mount
RoHS 狀態 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
封裝 — TSOP1-48
Page Read Time — [DATA_NEEDED: page read time]
Page Program Time — [DATA_NEEDED: page program time]
Block Erase Time — [DATA_NEEDED: block erase time]
Access Interface — Asynchronous multiplexed address/data, CLE/ALE control
Ready/Busy Output — Yes (R/B, open-drain)
Write Protect Pin — Yes (/WP)
Endurance — [DATA_NEEDED: program/erase cycles]

資料表與資源

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