M29F160FT55N3F2 vs M29F200FT55M3F2 比較

詳細並排比較 M29F160FT55N3F2 由 Micron Technology 與 M29F200FT55M3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ 啟用中
Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ 啟用中

規格比較

參數 M29F160FT55N3F2 M29F200FT55M3F2
品牌 Micron Technology Micron Technology
類別 Flash Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash (Parallel, Asynchronous) Parallel NOR Flash
Density 16 Mbit (16777 kbits) 2 Mbit (2097 kbits)
組織 1M x 16 / 2M x 8 256K x 8 / 128K x 16
Number of Words 1000 k —
Bits per Word 16 bits —
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V (operating 4.5 V) 5 V
介面 Parallel —
Synchronous / Asynchronous Asynchronous —
Boot Block Location Top boot block (FT) —
工作溫度 -40C to +125C -40C to +125C
封裝 48-Pin TSOP 44-pin SO (TSOP)
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel Tape & Reel (T/R)
Program / Erase Embedded byte/word program algorithms (controller on-chip) —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
Boot Block Architecture — Top Boot Block
Programming Interface — Embedded program/erase controller, byte or word
Automotive Qualification — Yes
Number of Words (x16 mode) — 128 K
Bits per Word (x16 mode) — 16 bits
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]

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