M29F160FT55N3F2 vs M29F400FT55N3F2 比較
詳細並排比較 M29F160FT55N3F2 由 Micron Technology 與 M29F400FT55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology
M29F160FT55N3F2 ✓ 啟用中
規格比較
| 參數 | M29F160FT55N3F2 | M29F400FT55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Flash | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash (Parallel, Asynchronous) | NOR Flash (SLC) |
| Density | 16 Mbit (16777 kbits) | — |
| 組織 | 1M x 16 / 2M x 8 | 256K x 16 |
| Number of Words | 1000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V (operating 4.5 V) | — |
| 介面 | Parallel | Parallel |
| Synchronous / Asynchronous | Asynchronous | — |
| Boot Block Location | Top boot block (FT) | — |
| 工作溫度 | -40C to +125C | [DATA_NEEDED: min operating temperature] |
| 封裝 | 48-Pin TSOP | 44-SO (SOP-44) |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| Program / Erase | Embedded byte/word program algorithms (controller on-chip) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| 記憶體容量 | — | 4 Mbit |
| 供應電壓 | — | 5 V |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |