M29F200FB55N3E2 vs M29F200FB55M3E2 比較
詳細並排比較 M29F200FB55N3E2 由 Micron Technology 與 M29F200FB55M3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F200FB55N3E2 | M29F200FB55M3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 停產終止 | 停產終止 |
| 記憶體類型 | NOR Flash, Parallel | Flash - NOR Memory IC |
| Density | 2 Mbit (2097 kbits) | 2097 kbits (2 Mbit) |
| 組織 | 256K x 8 / 128K x 16 | 128K x 16 bits |
| Number of Words | 128 K | 128 k |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | 5 V |
| Boot Block Architecture | Bottom Boot Block | Bottom Boot Block |
| 介面 | Parallel, 8/16-bit selectable | Parallel |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| 工作溫度 | -40C to +125C | -40C to +125C |
| Package Type | 48-pin TSOP I | 44-SO (SOP44) |
| 安裝類型 | Surface Mount | Surface Mount |
| Memory Cell Type | SLC NOR | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Program / Erase Controller | — | Embedded byte/word program algorithms |
| 品牌 | — | Micron Technology Inc. |
| Programming Voltage | — | [DATA_NEEDED: program/erase supply voltage] |
| Sector Organization | — | [DATA_NEEDED: sector/erase block organization] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |