M29F400FB55N3F2 vs M29W400FT55N3F 比較

詳細並排比較 M29F400FB55N3F2 由 Micron Technology 與 M29W400FT55N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29F400FB55N3F2 M29F400FB55N3F2 - 4Mbit 55ns NOR Flash 48-TSOP | Micron

M29F400FB55N3F2 - 4Mbit 55ns NOR Flash 48-TSOP | Micron

M29F400FB55N3F2 ✓ 啟用中
Micron Technology
M29W400FT55N3F M29W400FT55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FT55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FT55N3F ✓ 啟用中

規格比較

參數 M29F400FB55N3F2 M29W400FT55N3F
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash NOR Flash
Density 4 Mbit (4194 kbit) —
組織 256K x 16 / 512K x 8 4Mbit, block-organized, top boot block
Access Time 55 ns 55 ns
供應電壓 5 V [DATA_NEEDED: supply voltage range]
介面 Parallel Parallel
Boot Block Bottom boot block —
工作溫度 -40C to +125C [DATA_NEEDED: operating temperature range]
Program/Erase Controller Embedded byte/word program algorithms —
封裝 48-TSOP I 48-TSOP I
安裝類型 Surface Mount Surface Mount
Standard Package Quantity 1500 units (Tape & Reel) —
Active/Standby Current [DATA_NEEDED: active and standby current] —
Erase/Program Endurance [DATA_NEEDED: endurance cycles] —
Data Retention [DATA_NEEDED: retention years] [DATA_NEEDED: data retention]
VIO Range [DATA_NEEDED: I/O voltage range] —
RoHS 狀態 Compliant (lead-free build per F2 suffix) [DATA_NEEDED: RoHS status]
記憶體容量 — 4 Mbit
Bus Configuration — x8 / x16 (BYTE-selectable)
Program/Erase — Block erase, word/byte program
Suspend/Resume — Erase/program suspend and resume
Endurance — [DATA_NEEDED: program/erase cycles]
Packaging — Tape & Reel (TR suffix)
Prefix F in MPN — Pb-free package suffix

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