M29F400FT55N3E2 vs M29W400FB55N3E 比較
詳細並排比較 M29F400FT55N3E2 由 Micron Technology 與 M29W400FB55N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ 啟用中Micron Technology
M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology
M29W400FB55N3E ✓ 啟用中規格比較
| 參數 | M29F400FT55N3E2 | M29W400FB55N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash (Parallel) | NOR Flash (parallel) |
| Density | 4 Mbit (512K x 8) | 4 Mbit (4194 kbits) |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V (single supply) | — |
| 介面 | Parallel | Parallel, 8-bit/16-bit (BYTE# selectable) |
| Boot Block Architecture | Top boot (FT variant) | — |
| 封裝 | 44-SO (SOP-44) | 48-TSOP I, 12 x 20 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| Programming Supply | No 12 V VPP required (5.0 V programming) | — |
| Command Set | JEDEC standard compatible | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Cycles] | — |
| Data Retention | [DATA_NEEDED: Data Retention] | — |
| Active Read Current | [DATA_NEEDED: Active Current] | — |
| Standby Current | [DATA_NEEDED: Standby Current] | — |
| Block Protection | Hardware block protection | — |
| MSL 等級 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | Compliant |
| 組織 | — | 512K x 8 bit / 256K x 16 bit |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Block Architecture | — | 19 memory blocks, 1 boot block (bottom, FB) |
| Programming Time | — | 10 us per byte/word typical |
| Boot Block Hardware Protection | — | Yes |
| Pins | — | 48 |
| Packaging | — | Tray |
| Speed Grades in Family | — | 55 ns, 70 ns |