M29W160ET70N3E vs M29W160EB70N3F 比較
詳細並排比較 M29W160ET70N3E 由 Micron Technology 與 M29W160EB70N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron
M29W160ET70N3E ✓ 啟用中規格比較
| 參數 | M29W160ET70N3E | M29W160EB70N3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash (Parallel) | FLASH - NOR |
| 記憶體容量 | 16 Mbit | 16 Mbit (2M x8 / 1M x16) |
| 組織 | 2M x 8 / 1M x 16 | — |
| Access Time | 70 ns | 70 ns |
| 介面 | Parallel | Parallel (Byte/Word-wide) |
| 供應電壓 | 3 V / 3.3 V (nominal) | — |
| Boot Block Location | Top boot | — |
| 封裝 | 48-TSOP | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Bus Width Selection | BYTE# pin, x8 or x16 | — |
| Sector Protection | Hardware boot block protection | — |
| Programming Type | Automatic program and erase | — |
| Packing | Tray (RoHS-compliant package, standard packing) | — |
| RoHS 狀態 | Compliant (E suffix) | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming Time | — | 10 us per byte/word (typical) |
| Boot Block Position | — | Bottom boot block |
| Bus Configuration | — | x8 / x16 selectable (BYTE# pin) |
| 封裝 / 外殼 | — | 48-TSOP (0.724 in, 18.40 mm width) |
| Packaging | — | Tape & Reel |
| Qualification | — | Automotive, AEC-Q100 |
| Erase Architecture | — | Block erase (boot block + main blocks) |
| Common Flash Interface | — | Yes (CFI compliant) |
| Reset Input | — | RESET# hardware reset pin |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |